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Product Detailed Parameters
- Description：IGBT PT 650V 58A TO-247AD
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：58 A
- Current - Collector Pulsed (Icm)：108 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：230 W
- Switching Energy：500µJ (on), 450µJ (off)
- Input Type：Standard
- Gate Charge：29 nC
- Td (on/off) @ 25°C：12ns/103ns
- Test Condition：400V, 20A, 20Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYH20N65B3 is a single N-channel Power MOSFET from IXYS, belonging to the HiPerFET X-Class series. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 650 V and a continuous drain current (Id) of 20 A at 25°C. Its maximum on-resistance (Rds(on)) is 210 mΩ, with a gate-source voltage range of ±30 V and a threshold voltage of 3 V. The total gate charge is 35 nC. It supports a power dissipation of 320 W, operates within a temperature range of -55°C to +150°C, and exhibits turn-on/turn-off delays of 18 ns and 46 ns, respectively.
Feature Summary
- High-voltage capability suitable for demanding switching applications
- Low on-resistance for improved conduction efficiency
- Robust thermal performance with high power dissipation rating
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- Industrial inverters
Procurement Notes
Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component matches the specified TO-247-3 package and electrical parameters. Check RoHS compliance status as indicated in the datasheet. Ensure the supplier provides valid traceability records for quality assurance purposes.
Selection Notes
Select this component when a 650 V rated N-channel MOSFET with moderate current handling is required. Consider the 210 mΩ on-resistance for conduction loss calculations. Evaluate the 320 W power dissipation against your thermal management design. Ensure the driving circuit can handle the 35 nC gate charge for efficient switching.
Part Context
This MOSFET is part of IXYS' HiPerFET family, specifically the X-Class series designed for high-performance applications. It complements other devices in the lineup by offering a balance of voltage rating and current capacity in a standard through-hole package, suitable for various power electronics designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with any potential replacements by matching key electrical parameters such as Vds, Id, Rds(on), and package type.
