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The IXYH20N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, housed in a TO-247AD-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +175°C.
Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component matches the specified TO-247AD-3 package and C3-Class designation. Check for any specific ordering suffixes that may indicate variations in packaging or testing criteria. Ensure compliance with relevant environmental standards such as RoHS where applicable.
Select this component for applications requiring a 650 V rated IGBT with an 80 A continuous current capacity. The TO-247AD-3 package is suitable for through-hole assembly on printed circuit boards. Consider the thermal management requirements based on the 300 W power dissipation rating and the operating temperature range up to 175°C. Verify compatibility with the driving circuit's gate voltage specifications.
This component is part of the IXYS IXYH series of IGBTs. It shares the XPT technology and C3-Class classification with other models in the lineup, such as the IXYH40N65C3 and IXYH75N65C3. These devices are designed for general-purpose power switching applications, offering a balance of low conduction losses and fast switching speeds within the 650 V voltage class.