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The IXYH24N170C is a high-voltage N-channel XPT™ IGBT manufactured by IXYS. It features a collector-emitter breakdown voltage (VCES) of 1700 V and a continuous collector current (IC110) of 24 A at 110°C, with a maximum saturation voltage (VCE(sat)) of 3.8 V. The device operates within a junction temperature range of -55°C to +175°C and utilizes a TO-247 package. Key electrical parameters include a gate-emitter threshold voltage of 3.0 V to 5.0 V, total gate charge of 96 nC, and turn-off time of 50 ns. Thermal resistance from junction to case is rated at 0.30 °C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct configuration. Confirm that the component meets all required environmental standards and RoHS compliance specifications before finalizing procurement orders. Cross-reference datasheet revision dates to ensure technical accuracy.
Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the gate drive circuitry supports the recommended 15 V operating voltage and accounts for the total gate charge. Verify that the application's peak current demands remain within the clamped inductive load safe operating area limits defined in the datasheet.
This component belongs to IXYS' high-voltage IGBT portfolio utilizing XPT™ technology. It is designed for applications requiring high blocking voltage and efficient switching characteristics. The TO-247 package provides robust mechanical mounting and thermal dissipation capabilities suitable for industrial power electronics environments.
No publicly confirmed substitute part numbers are available in the provided source material. Consult the manufacturer for potential cross-references or updated product line replacements.
The maximum collector-emitter voltage (VCES) is 1700 V across the operating temperature range.
The typical turn-off time (tfi) is 50 ns under standard test conditions.
The IXYH24N170C is housed in a TO-247 package.