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Product Detailed Parameters
- Description：IGBT 900V 44A TO-247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：44 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 24A
- Power - Max：200 W
- Switching Energy：1.35mJ (on), 400µJ (off)
- Input Type：Standard
- Gate Charge：40 nC
- Td (on/off) @ 25°C：20ns/73ns
- Test Condition：450V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：340 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH24N90C3D1 is an N-channel high-voltage MOSFET from the IXYS HiPerFET family, designed for demanding power switching applications. It features a 900V drain-source breakdown voltage and a continuous drain current of 24A at 25°C. The device incorporates a fast intrinsic body diode with a reverse recovery time of 65ns, making it suitable for hard-switching topologies. Packaged in a TO-247-3 through-hole housing, it offers a maximum power dissipation of 380W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with 900V breakdown rating
- Integrated fast intrinsic rectifier for efficient commutation
- Optimized gate charge for reduced switching losses
- Robust avalanche energy rating for rugged operation
Applications
- High-frequency switch-mode power supplies
- Motor drive inverters
- Uninterruptible power supply (UPS) systems
- Industrial motor control circuits
Procurement Notes
Verify the specific suffix C3D1 against official datasheets to confirm package type and internal diode characteristics. Ensure thermal management solutions match the TO-247-3 footprint and power dissipation limits. Cross-reference manufacturer part numbers to avoid confusion with similar HiPerFET variants.
Selection Notes
Select this component when a 900V rating is required alongside moderate current handling. Compare on-resistance and gate charge values against alternative MOSFETs to optimize efficiency. Consider the integrated diode speed if used in synchronous rectification or bridge configurations where reverse recovery impacts performance.
Part Context
This part belongs to the IXYS HiPerFET series, known for combining low on-resistance with fast switching speeds. The TO-247-3 package provides a balance between thermal performance and ease of mounting in industrial enclosures. It serves as a discrete solution for medium-power conversion stages.
Replacement Considerations
Direct substitutes include other 900V N-channel MOSFETs in TO-247 packages with comparable Rds(on) and Qg specifications. Verify pinout compatibility and thermal resistance values before implementation.
