IXYH30N120B4

Overview

The IXYS IXYH30N120B4 is a single N-channel Punch-Through (PT) Insulated Gate Bipolar Transistor designed for high-power switching applications. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 100 A at 25°C. The device utilizes the GenX3™ technology platform, offering optimized performance with low saturation voltage characteristics. Packaged in a TO-247(IXYH) leaded housing, it supports through-hole mounting and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a maximum power dissipation of 500 W, a gate-emitter voltage limit of ±20 V, and specific switching energy values of 2.6 mJ (turn-on) and 4.4 mJ (turn-off).

Feature Summary

• Utilizes IXYS GenX3™ Punch-Through technology for enhanced switching efficiency.
• High current handling capability with a 100 A continuous collector current rating.
• Robust thermal management design supporting operation up to 175°C junction temperature.
• Standardized TO-247(IXYH) package configuration for reliable through-hole integration.

Applications

• Industrial motor drives and variable frequency drives
• High-frequency power supply circuits
• Inverter systems for renewable energy conversion

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm that the ordering suffix matches the exact PT variant required for your circuit design. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Cross-reference the specific lot code with manufacturer quality documentation to guarantee compliance with RoHS directives and material declarations.

Selection Notes

Select this component when a 1200 V blocking capability and 100 A continuous current are required in a standard TO-247 footprint. Consider the specific switching energy profile and saturation voltage characteristics for thermal calculations. Evaluate the compatibility of the gate charge requirements with available driver circuits. Compare against alternative series if lower on-state voltage drop or different packaging options are necessary for the target application.

Part Context

This discrete transistor belongs to the IXYS IXYH30N120 product family, which focuses on medium-to-high power switching solutions. The series is characterized by robust punch-through architecture designed for industrial environments. It serves as a fundamental building block for power electronics requiring high voltage isolation and significant current capacity within a standardized surface-mount compatible leaded package format.

Replacement Considerations

Public confirmed substitute part numbers: None identified in verified sources.