IXYH30N120C3

Overview

The IXYS IXYH30N120C3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C, with a pulsed current rating of 145 A. The device exhibits a maximum collector-emitter saturation voltage of 3.3 V at 15 V gate drive and 30 A collector current. Key electrical parameters include a gate charge of 69 nC, turn-on energy of 2.6 mJ, and turn-off energy of 1.1 mJ under test conditions of 600 V, 30 A, 10 Ω, and 15 V. Maximum power dissipation is rated at 500 W, with an operating junction temperature range from -55°C to +175°C.

Feature Summary

• Integrates XPT™ technology for optimized trade-offs between conduction losses and switching performance.
• Utilizes GenX3™ architecture to achieve low gate charge and reduced switching energies.
• Features a robust square Reverse Bias Safe Operating Area (RBSOA) for enhanced reliability under fault conditions.

Applications

• High-frequency motor drives and inverters
• Switched-mode power supplies (SMPS)
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement source provides valid traceability documentation. Cross-reference the component marking with the official part identification to prevent counterfeit substitution. Confirm RoHS compliance status if required by the target assembly specifications.

Selection Notes

Select this component when a high-voltage single IGBT with moderate current capacity is required for through-hole mounting. The TO-247-3 package facilitates efficient heat sinking for applications dissipating up to 500 W. Consider the 3.3 V saturation voltage and 69 nC gate charge for balancing efficiency against driver complexity in circuits operating near the specified 1200 V limit.

Part Context

This device belongs to the IXYH30 series, representing IXYS' GenX3 generation of XPT IGBTs. It is designed as a single discrete transistor variant within the broader portfolio of high-power semiconductor switches. The product line targets industrial applications requiring reliable switching at 1200 V ratings with improved efficiency over previous generations.

Replacement Considerations

Direct replacements must match the 1200 V rating, 75 A continuous current, and TO-247-3 package. Verify that alternative parts maintain comparable Vce(sat) and switching energy values to ensure circuit performance parity.

FAQ

What are the specific test conditions for the quoted switching energies?

The turn-on energy of 2.6 mJ and turn-off energy of 1.1 mJ are measured at a collector-emitter voltage of 600 V, a collector current of 30 A, a gate resistance of 10 Ω, and a gate-emitter voltage of 15 V.

Does this IGBT feature a built-in anti-parallel diode?

No, the IXYH30N120C3 is a standard single IGBT without an integrated anti-parallel diode. An external freewheeling diode must be used in bridge configurations or inductive load circuits.

What is the maximum allowable junction temperature?

The maximum operating junction temperature (Tj) for the IXYH30N120C3 is +175°C.