IXYH30N120C3D1

Overview

The IXYS IXYH30N120C3D1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing XPT and GenX3 technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 66 A at 25°C. The device operates with a saturated collector-emitter voltage of 3.3 V at 30 A and supports switching frequencies up to 50 kHz. Packaged in a TO-247 through-hole housing, it dissipates 416 W of power and functions within a junction temperature range of -55°C to 150°C.

Feature Summary

• Optimized for high-frequency operation between 20 kHz and 50 kHz using XPT thin wafer technology.
• Integrates GenX3 trench gate architecture to achieve low conduction losses and reduced gate charge.
• Designed for robust performance in hard-switching applications with controlled turn-off behavior.

Applications

• High-frequency motor drives and inverters
• Switch-mode power supplies (SMPS)
• Induction heating systems

Procurement Notes

Verify the specific suffix D1 against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the ordering part number matches the exact package variant required for the PCB footprint. Cross-reference manufacturer documentation to validate RoHS compliance status prior to procurement.

Selection Notes

Select this component for designs requiring fast switching speeds up to 50 kHz with moderate current handling. The TO-247 package facilitates efficient heat dissipation for single-phase topologies. Evaluate thermal resistance requirements against the 416 W power dissipation rating to determine appropriate heatsinking solutions for the target operating environment.

Part Context

This device belongs to the IXYS IXYH series of high-speed IGBTs. It shares the GenX3 and XPT technological foundation with other models in the family but is distinguished by its specific 66 A current rating and 1200 V blocking capability. The D1 suffix typically denotes specific manufacturing or testing variations within the standard TO-247 product line.

Replacement Considerations

The IXYH30N120C3 is a closely related model within the same series. Verify electrical parameter equivalence and package compatibility before substitution. Other high-speed 1200V IGBTs from different manufacturers may require re-evaluation of gate drive circuits due to differing switching characteristics.