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The IXYH30N170C is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum continuous collector current of 100 A and a collector-emitter voltage rating of 1700 V. The device utilizes XPT technology for high-voltage performance and is housed in a TO-247AD package with three pins for through-hole mounting. Key electrical specifications include a maximum power dissipation of 937 W, a collector-emitter saturation voltage of 4 V, and a gate-emitter voltage limit of ±30 V. The component operates within a temperature range from -55°C to 175°C.
Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the specific revision or suffix matches the required technical specifications. Check for RoHS compliance status if environmental regulations apply to the end product. Ensure the supplier provides valid traceability records for quality assurance purposes.
Select this component when a single N-channel IGBT with 1700 V blocking capability and 100 A current handling is required. The TO-247AD package facilitates effective heat sinking for high-power dissipation scenarios. Consider the 4 V saturation voltage for efficiency calculations in switching applications requiring moderate speed.
The IXYH30N170C belongs to the IXYS High Voltage series of IGBTs. This series focuses on utilizing XPT (Extra-Precision Technology) to optimize the trade-off between conduction losses and switching performance in high-voltage environments. It serves as a discrete solution for power conversion stages where reliability under high stress is critical.
The IXYH16N170C is a related high-voltage XPT IGBT in the same family. Verify pinout compatibility and thermal characteristics before substitution. Ensure the replacement meets the specific current and voltage requirements of the circuit design.