IXYH30N450HV

$48.57

Description：IGBT PT 4500V 60A TO-247HV
Series：XPT™

SKU:7e20f8ee6364 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 4500V 60A TO-247HV
Series：XPT™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：4500 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 30A
Power - Max：430 W
Switching Energy：-
Input Type：Standard
Gate Charge：88 nC
Td (on/off) @ 25°C：-
Test Condition：960V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：TO-247HV
Grade：-
Qualification：-

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IXYH30N450HV

Overview

The IXYH30N450HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology to achieve a high collector-emitter voltage rating of 4.5 kV. The device is housed in a TO-247-3 package, suitable for through-hole mounting. Key electrical parameters include a maximum continuous collector current of 60 A at 25°C and a saturated collector-emitter voltage of 3.9 V. The component supports a maximum power dissipation of 430 W and operates within a temperature range of -55°C to +150°C.

Feature Summary

XPT technology enables robust performance at high blocking voltages up to 4.5 kV.
Single configuration designed for efficient switching in high-power circuits.
TO-247-3 package provides reliable thermal management and mechanical stability.

Applications

High-voltage industrial motor drives
Uninterruptible power supply (UPS) systems
High-frequency induction heating equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout and packaging details. Ensure that the procurement channel provides valid traceability documentation. Confirm that the component meets the required environmental standards for the intended application environment before finalizing orders.

Selection Notes

Select this component when a high voltage rating of 4.5 kV is required alongside moderate current handling capabilities. Consider the thermal resistance of the TO-247-3 package for heat sink design. Evaluate the gate charge characteristics against the driving circuit's capability to ensure efficient switching speeds.

Part Context

This IGBT belongs to IXYS' high-voltage discrete transistor lineup, leveraging proprietary field-stop technology. It serves as a critical switching element in applications demanding isolation from high potential differences while maintaining low conduction losses compared to standard planar structures.