IXYH30N65C3

Overview

The IXYH30N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and belongs to the XPT C3-Class series, housed in a TO-247AD-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 80 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 300 W. It operates within a temperature range of -55°C to +175°C with a maximum leakage current of 100 nA.

Feature Summary

• Incorporates XPT (eXtended Plate Technology) architecture to optimize switching performance and reduce energy losses.
• Features C3-Class design characteristics for enhanced ruggedness and reliability in high-power applications.
• Utilizes a TO-247AD-3 package configuration suitable for robust thermal management and secure mechanical mounting.

Applications

• High-frequency power conversion systems
• Industrial motor drive inverters
• Uninterruptible Power Supply (UPS) units

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm that the specific part marking matches the IXYH30N65C3 designation to avoid substitution errors. Ensure storage conditions comply with moisture sensitivity levels defined in the manufacturer's datasheet to maintain device integrity during assembly processes.

Selection Notes

Select this component when a 650V rating and 80A continuous current capability are required in a standard through-hole form factor. The low saturation voltage makes it suitable for efficiency-critical designs. Evaluate thermal resistance requirements against the 300W dissipation limit to determine appropriate heatsinking solutions for the intended operating environment.

Part Context

This device is part of the IXYS IXYH40N65 product family, sharing similar voltage ratings and technological foundations. It serves as a specific current-rated variant within the broader portfolio of silicon-based IGBTs designed for medium to high-power industrial applications. The C3 classification indicates specific internal structural optimizations compared to earlier generations.

Replacement Considerations

Direct pin-compatible substitutes within the same IXYS family include the IXYH40N65C3, which offers higher current handling. Cross-manufacturer replacements require careful verification of saturation voltage, switching times, and thermal characteristics to ensure circuit compatibility without redesign.