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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 112A TO-247
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：112 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 32A
- Power - Max：600 W
- Switching Energy：5.9mJ (on), 2.9mJ (off)
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：19ns/220ns
- Test Condition：960V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr)：430 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH40N120B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT™ and GenX4™ technologies to achieve low saturation voltage and optimized switching performance. The device features a TO-247AD-3 through-hole package, supporting a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 680 W. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Integrates XPT thin-wafer technology for reduced conduction losses
- Employs GenX4 trench gate architecture for improved switching characteristics
- Designed for high power density with low gate drive requirements
Applications
- Power inverters
- Motor drives
- PFC circuits
- Battery chargers
- Welding machines
Procurement Notes
Verify the specific suffix H1 against official datasheets to confirm pinout and thermal interface compatibility. Ensure the component source is an authorized distributor to avoid counterfeit parts. Cross-reference the manufacturer part number with the latest revision history to confirm technical specifications match the intended design requirements.
Selection Notes
Select this component for applications requiring 1200V blocking capability with moderate current handling. Compare the 2.5V saturation voltage against alternative devices to evaluate conduction loss efficiency. Verify that the TO-247AD-3 package fits the available PCB footprint and heatsinking constraints for the target power dissipation level.
Part Context
This IGBT belongs to the IXYS IXYxN120A4 series, which represents fourth-generation trench gate technology. The series is characterized by ultra-low saturation voltages and support for switching frequencies up to 5kHz. It shares the same technological foundation as other models in the 1200V family but offers specific current ratings tailored for distinct power levels.
Replacement Considerations
Direct substitutes within the same series include IXYH40N120C4 and IXYH40N120B4. Verify package compatibility and electrical parameter equivalence before substitution.
