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The IXYH40N120C3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series. It utilizes XPT technology to achieve low saturation voltage and optimized switching performance. The device features a TO-247AD-3 through-hole package with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of ±20 V, and a power dissipation rating of 680 W. It operates within a temperature range of -55°C to +175°C.
Verify the specific suffix 'C3' against official IXYS documentation to confirm pinout and thermal interface specifications. Ensure the procurement channel provides valid datasheets matching the part number. Confirm RoHS compliance status directly from the manufacturer's declaration. Check for any recent product change notices that may affect mechanical or electrical parameters.
Select this component when a 1200V rating and 40A continuous current are required in a TO-247AD package. Consider the 2.5V saturation voltage for efficiency needs. Compare against other GenX3 variants if higher current or different packaging is needed. Verify thermal management capabilities align with the 680W dissipation rating under actual operating conditions.
This part belongs to the IXYS GenX3 family of IGBTs, which are designed for high-efficiency power conversion. The series typically includes various voltage and current ratings packaged in TO-247 and similar formats. These devices are engineered for industrial applications requiring robust performance and reliability.
Direct substitutes may include other IXYS GenX3 devices with matching voltage and current ratings. Cross-brand replacements require verification of pin compatibility, saturation voltage, and thermal characteristics. Always consult official replacement guides before swapping components.