IXYH40N120C3

IXYH40N120C3

$10.27
  • Description:IGBT 1200V 70A TO-247
  • Series:GenX3™, XPT™

SKU:59b1396d90ec Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 1200V 70A TO-247
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):70 A
  • Current - Collector Pulsed (Icm):115 A
  • Vce(on) (Max) @ Vge, Ic:4V @ 15V, 40A
  • Power - Max:577 W
  • Switching Energy:3.9mJ (on), 660µJ (off)
  • Input Type:Standard
  • Gate Charge:85 nC
  • Td (on/off) @ 25°C:24ns/125ns
  • Test Condition:600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 (IXTH)
  • Grade:-
  • Qualification:-

Download product information

IXYH40N120C3

Overview

The IXYH40N120C3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series. It utilizes XPT technology to achieve low saturation voltage and optimized switching performance. The device features a TO-247AD-3 through-hole package with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of ±20 V, and a power dissipation rating of 680 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

  • Utilizes XPT thin-wafer technology for reduced conduction losses
  • Features GenX3 trench gate architecture for improved switching characteristics
  • Designed for high power density applications with low gate drive requirements

Applications

  • Power inverters
  • Motor drives
  • PFC circuits
  • Battery chargers
  • Welding machines

Procurement Notes

Verify the specific suffix 'C3' against official IXYS documentation to confirm pinout and thermal interface specifications. Ensure the procurement channel provides valid datasheets matching the part number. Confirm RoHS compliance status directly from the manufacturer's declaration. Check for any recent product change notices that may affect mechanical or electrical parameters.

Selection Notes

Select this component when a 1200V rating and 40A continuous current are required in a TO-247AD package. Consider the 2.5V saturation voltage for efficiency needs. Compare against other GenX3 variants if higher current or different packaging is needed. Verify thermal management capabilities align with the 680W dissipation rating under actual operating conditions.

Part Context

This part belongs to the IXYS GenX3 family of IGBTs, which are designed for high-efficiency power conversion. The series typically includes various voltage and current ratings packaged in TO-247 and similar formats. These devices are engineered for industrial applications requiring robust performance and reliability.

Replacement Considerations

Direct substitutes may include other IXYS GenX3 devices with matching voltage and current ratings. Cross-brand replacements require verification of pin compatibility, saturation voltage, and thermal characteristics. Always consult official replacement guides before swapping components.

IXYH40N120C3IXYH40N120C3
$10.27
Buy Now