IXYH40N65C3D1

Overview

The IXYH40N65C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies within a TO-247AD-3 package designed for through-hole mounting. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 1.8 V at 40 A, and a gate charge of 95 nC. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Incorporates IXYS XPT technology to optimize the trade-off between conduction losses and switching performance.
• Utilizes GenX3 trench gate architecture to achieve low on-state voltage and fast switching speeds.
• Designed with robust short-circuit capability and high thermal stability for demanding power applications.

Applications

• High-frequency motor drives and inverters
• Switched-mode power supplies (SMPS)
• Induction heating systems

Procurement Notes

Verify the specific suffix D1 against the official IXYS datasheet to confirm pinout and packaging details. Ensure compatibility with standard TO-247AD footprints during PCB layout. Confirm RoHS compliance status via the manufacturer's latest documentation before integration into regulated products.

Selection Notes

Select this component for designs requiring a balance of moderate current handling and efficient switching at 650 V. Compare the 1.8 V saturation voltage and 95 nC gate charge against alternative IGBTs to determine suitability for specific efficiency targets. Ensure the drive circuit can supply the required gate voltage swing without exceeding the ±20 V limit.

Part Context

This part belongs to the IXYS IXYH series, which integrates XPT soft-recovery diode technology in some variants, though the D1 suffix specifies the discrete transistor configuration. It is distinct from the IXSH SiC MOSFET line and the IXXH higher-current Trench IGBT series. The TO-247AD package provides a standardized mechanical interface for heatsinking in industrial power modules.

Replacement Considerations

Direct pin-compatible replacements may include other IXYS IGBTs in the TO-247AD package with similar 650 V ratings, such as the IXYH50N65C3D1 for higher current capacity. Cross-manufacturer equivalents should be evaluated based on matching Vce(sat), Qg, and thermal resistance specifications.