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The IXYH40N90C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the XPT and GenX3 product families. The device is housed in a TO-247AD-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 900 V, a continuous collector current of 105 A at 25°C, and a collector-emitter saturation voltage of 2.2 V. Maximum power dissipation is rated at 600 W, with an operating temperature range from -55°C to +175°C.
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific suffix D1 corresponds to the required packaging configuration as defined in the manufacturer's datasheet. Ensure supply chain sources provide valid traceability records to mitigate counterfeiting risks during procurement.
Select this component when a 900V rating is required alongside high current handling capabilities. The TO-247AD-3 package facilitates efficient thermal management for high-power density designs. Evaluate the 2.2V saturation voltage against system efficiency targets to ensure optimal conduction loss performance under load conditions.
This part belongs to the IXYS IXYH40N90 series, which integrates advanced silicon planar technology. The series is engineered for applications demanding high blocking voltages and fast switching speeds. It represents a specialized segment of IXYS' discrete IGBT portfolio focused on industrial power conversion efficiency.
Direct substitutes must match the 900V/105A specification and TO-247AD-3 footprint. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with other IXYS GenX3 variants or equivalent industry standards if exact availability is constrained.