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Product Detailed Parameters
- Description：IGBT 1200V 90A TO-247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：210 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 50A
- Power - Max：625 W
- Switching Energy：3mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：28ns/133ns
- Test Condition：600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：195 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH50N120C3D1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology and XPT (Extended Plateau Technology) to optimize switching performance for frequencies between 20 kHz and 50 kHz. The device features a single configuration in a TO-247 package with through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 1200 V, a continuous collector current (Ic) of 66 A at 25°C, and a maximum power dissipation (Pd) of 416 W. The saturation voltage (VceSAT) is specified at 3.3 V, with an operating temperature range from -55°C to +150°C.
Feature Summary
- GenX3 technology optimized for high-frequency switching applications
- XPT structure providing improved short-circuit ruggedness and lower switching losses
- High-speed performance suitable for 20-50 kHz operation
Applications
- High-frequency inverters
- Switch-mode power supplies
- Motor control drives
Procurement Notes
Verify the specific suffix D1 against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing gate drive circuits regarding voltage thresholds. Confirm RoHS compliance status through manufacturer documentation before integration into regulated assemblies.
Selection Notes
Select this component when designs require high switching speeds up to 50 kHz with moderate current handling. Compare VceSAT and switching energy losses against alternative GenX3 devices. Ensure the TO-247 package fits the thermal management strategy and PCB layout constraints of the target application.
Part Context
This part belongs to the IXYS GenX3 family of high-speed IGBTs. It shares architectural similarities with other models like IXYH30N120C3D1 but offers higher current capacity. The series is designed to replace older generation fast-switching transistors in demanding power electronics environments.
Replacement Considerations
Direct substitutes within the same family include IXYH30N120C3D1 for lower current requirements. Cross-manufacturer equivalents should be evaluated based on Vceo, Ic, and package dimensions to ensure mechanical and electrical compatibility.
