IXYH50N170C

Overview

The IXYH50N170C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT (Extra-Precision Technology) to achieve a collector-emitter breakdown voltage of 1700 V and a continuous collector current rating of 50 A at 25°C. The device features a low saturation voltage of 3.3 V maximum, contributing to reduced conduction losses. It is housed in a TO-247AD-3 package designed for through-hole mounting. Key thermal parameters include a junction-to-case thermal resistance of 0.65 °C/W and a maximum power dissipation of 250 W. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

• XPT technology provides an optimized trade-off between low on-state voltage and switching losses.
• Square Reverse Bias Safe Operating Area (RBSOA) ensures robust performance under short-circuit conditions.
• TO-247AD-3 package design facilitates efficient heat dissipation and reliable high-power operation.

Applications

• High-frequency induction heating systems
• Uninterruptible Power Supplies (UPS)
• Motor drive inverters

Procurement Notes

Verify the specific ordering suffix against official IXYS documentation to confirm exact electrical characteristics and packaging configuration. Ensure that the procurement channel provides valid traceability and authenticity guarantees for semiconductor components. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current production status and availability constraints prior to finalizing orders.

Selection Notes

Select this component for applications requiring high voltage blocking capability combined with moderate current handling in a standard through-hole form factor. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance and maximum power dissipation limits. Compare the saturation voltage and switching energy values against alternative devices to ensure optimal efficiency for the specific circuit topology and operating frequency.

Part Context

This device belongs to the IXYS Gen5 XPT IGBT family, which incorporates trench gate technology for improved switching performance. The XPT process allows for thinner wafers, reducing stored charge and enabling faster turn-off times compared to conventional planar technologies. This series is engineered for high-efficiency power conversion in industrial and consumer electronics applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with potential alternatives by matching critical parameters such as voltage rating, current capacity, package dimensions, and thermal resistance specifications.