IXYH50N65C3

Overview

The IXYH50N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, designed for high-efficiency switching applications. The device features a collector-emitter breakdown voltage (VCEO) of 650 V and supports a continuous collector current (Ic) of 130 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage (VCEsat) of 2.1 V and a gate-emitter voltage range of ±20 V. The component is housed in a D2PAK-2 (TO-263-2) surface-mount package with a power dissipation rating of 600 W and an operating temperature range from -55°C to +175°C.

Feature Summary

• XPT Technology: Utilizes IXYS' patented eXtended Plateau Technology to optimize the trade-off between low conduction losses and fast switching speeds.
• High Current Capability: Designed for robust performance with a 130 A continuous collector current rating in a compact TO-263-2 package.
• Low Saturation Voltage: Achieves a typical VCEsat of 2.1 V, contributing to reduced thermal stress and improved system efficiency.
• Wide Operating Temperature: Rated for junction temperatures up to 175°C, ensuring reliability in demanding thermal environments.

Applications

• Industrial motor drives and variable frequency drives (VFDs)
• Uninterruptible power supplies (UPS) and inverters
• High-frequency power supplies and welding equipment
• Solar energy inverters and battery management systems

Procurement Notes

Verify the specific ordering suffix and manufacturing date code upon procurement to ensure compliance with RoHS directives and REACH regulations. Confirm the package variant matches the required PCB footprint, as TO-263-2 dimensions must align with design specifications. Request the official datasheet and test reports directly from authorized distributors or IXYS to validate authenticity and traceability before finalizing orders.

Selection Notes

Select the IXYH50N65C3 when designing circuits requiring 650 V blocking capability with high current handling in a surface-mount form factor. Ensure the gate driver can supply sufficient current to manage the gate charge effectively at the target switching frequency. Verify that the thermal management solution can dissipate the 600 W power rating under worst-case load conditions to maintain junction temperature within the 175°C limit.

Part Context

This component is part of the IXYS IXYA/IXYH series of XPT IGBTs, which are engineered for medium-power applications. The 'H' suffix typically denotes specific packaging or tape-and-reel variations compared to tube-packed counterparts like the IXYA50N65C3. It shares core electrical characteristics with other 650V C3-class devices but offers distinct mechanical integration options for automated assembly processes.

Replacement Considerations

Direct pin-compatible replacements within the same voltage and current class should be evaluated based on switching speed and saturation voltage similarities. Cross-reference with other IXYS C3-series TO-263-2 IGBTs such as the IXYA50N65C3 for mechanical fit, though verify if the suffix change impacts packaging or minor electrical tolerances. Always consult the latest datasheets for potential obsolescence or parameter updates.