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The IXYH50N65C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, housed in a TO-247AD package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 300 W. It operates within a temperature range from -55°C to +175°C.
Verify the specific suffix H1 against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing heatsinking solutions due to the TO-247AD form factor. Cross-reference manufacturer documentation for any recent lifecycle changes or recommended design-in guidelines before finalizing procurement plans.
Select this component for circuits requiring 650V blocking capability and 100A continuous current handling. The low saturation voltage aids in reducing conduction losses. Verify that the thermal management system can dissipate up to 300W effectively. Confirm that the drive circuitry provides the required ±20V gate-emitter voltage limits for safe operation.
This part is part of the IXYS IGYH50N65 series, which includes variants like IXYH50N65C3D1 and IXYH50N65C3. The H1 suffix typically denotes a specific pin configuration or mechanical variant within the broader family. It shares core electrical specifications with other C3-class devices but may differ in packaging details or internal construction.
Direct replacements include IXYH50N65C3D1 and IXYH50N65C3. Verify pinout compatibility when substituting. Other options in the same voltage and current class should be evaluated for saturation voltage and thermal resistance differences.