IXYH55N120B4H1

Overview

The IXYH55N120B4H1 is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT Gen 4 technology and features a Trench gate structure for optimized switching performance. The device is housed in a TO-247-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 175 A at 25°C. The saturation voltage is specified at 1.8 V, with a power dissipation capacity of 650 W. The component operates within a temperature range from -55°C to +175°C and has a maximum gate-emitter voltage of ±20 V.

Feature Summary

• Incorporates XPT Gen 4 thin-wafer technology to enhance short-circuit ruggedness and reduce tail current during turn-off.

Applications

• High-power motor drive inverters
• Industrial welding equipment
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific suffix B4H1 against official IXYS documentation to confirm pinout compatibility and thermal characteristics. Ensure that the ordering information matches the exact technical requirements for the intended application circuit design.

Selection Notes

Select this component for applications requiring high voltage blocking capability and robust short-circuit withstand times. The TO-247-3 package facilitates efficient heat sinking for high-current operations up to 175 A.

Part Context

This part belongs to the IXYS IXYH series of high-voltage IGBTs. It represents an evolution in Trench gate technology, offering improved efficiency compared to older planar designs while maintaining reliability in demanding industrial environments.

Replacement Considerations

Cross-reference with IXYH55N120A4 or IXYH55N120C4 for potential mechanical and electrical compatibility, subject to verification of specific parameter differences such as saturation voltage and switching times.