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Product Detailed Parameters
- Description：IGBT 1200V 140A TO-247
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：290 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 55A
- Power - Max：650 W
- Switching Energy：3.5mJ (on), 1.34mJ (off)
- Input Type：Standard
- Gate Charge：114 nC
- Td (on/off) @ 25°C：20ns/180ns
- Test Condition：600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH55N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the 4th generation Trench IGBT series. The device features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 1.2 kV. At 25°C, it supports a continuous collector current of 140 A and a maximum pulsed current of 290 A. The saturation voltage is 2.5 V, with a gate-emitter voltage range of -20 V to +20 V. Power dissipation reaches 650 W, operating within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates XPT thin-wafer technology for optimized performance in high-voltage applications.
- Utilizes 4th generation Trench IGBT architecture for improved switching characteristics.
- Designed for robust operation with a maximum junction temperature of +175°C.
Applications
- Industrial motor drives
- High-frequency power supplies
- Uninterruptible power systems
Procurement Notes
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product line. Ensure storage conditions comply with manufacturer guidelines to maintain reliability. Cross-reference datasheet revisions to confirm parameter consistency during procurement.
Selection Notes
Select this component when a 1.2 kV rating and TO-247-3 packaging are required. The 140 A continuous current capability suits moderate-to-high power density designs. Consider the 2.5 V saturation voltage for thermal management calculations. Verify compatibility with existing gate drive voltages limited to ±20 V.
Part Context
This part belongs to the IXYS 1200V XPT Gen 4 family. It shares the TO-247-3 form factor with other discrete IGBTs in the lineup but differs in current handling and saturation voltage based on internal cell design. It serves as a high-performance alternative to previous generation devices requiring similar voltage ratings.
Replacement Considerations
Direct substitutes include IXYH55N120A4, which offers lower saturation voltage but higher continuous current. Verify pinout compatibility and thermal resistance differences when swapping between C4 and A4 suffix variants.
