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Product Detailed Parameters
- Description：IGBT 1200V 240A TO-247AD
- Series：XPT™, GenX4™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：240 A
- Current - Collector Pulsed (Icm)：440 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 75A
- Power - Max：1150 W
- Switching Energy：4.5mJ (on), 2.7mJ (off)
- Input Type：Standard
- Gate Charge：157 nC
- Td (on/off) @ 25°C：22ns/182ns
- Test Condition：600V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr)：66 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYH75N120B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and features a TO-247AD through-hole package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a saturation voltage of 2.2 V at 15 V gate drive and 75 A, with a power dissipation rating of 375 W. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- XPT technology for optimized trade-off between conduction losses and switching performance
- High voltage blocking capability suitable for demanding industrial applications
- Robust thermal design in TO-247AD package for efficient heat dissipation
Applications
- Induction heating systems
- Motor drives and inverters
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct pinout and packaging configuration. Confirm RoHS compliance status and environmental declarations prior to integration. Cross-reference the manufacturer's latest documentation to validate component authenticity and technical specifications.
Selection Notes
Select this component for high-voltage applications requiring low conduction losses. Evaluate thermal management requirements based on the 375 W power dissipation limit. Ensure gate drive circuits support the specified voltage levels for optimal switching characteristics and reliability in high-power environments.
Part Context
This part belongs to the IXYS XPT series of high-voltage IGBTs. It is designed for efficiency in power conversion systems. The TO-247AD package provides mechanical stability and thermal performance. It serves as a key semiconductor switch in medium to high-power electronic circuits.
Replacement Considerations
Direct substitutes may include IXYH50N120C3 or similar high-voltage IGBTs from other manufacturers, provided voltage, current, and package compatibility are verified.
