IXYH75N65C3

Overview

The IXYH75N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing Silicon technology. It features a TO-247-3 through-hole package and operates within a temperature range of -55°C to +175°C. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 170 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a maximum power dissipation (Pd) of 750 W. Additional specifications include a maximum gate-emitter voltage of 30 V, a gate-emitter leakage current of 100 nA, and a factory packaging quantity of 30 units per tube.

Feature Summary

• Incorporates XPT (eXtended Plateau Technology) for optimized switching performance and low conduction losses.
• Features C3-Class design enhancements for improved ruggedness and reliability under high-stress conditions.
• Utilizes GenX3™ technology architecture to achieve superior thermal management and reduced switching energy.

Applications

• High-frequency power supplies and inverters
• Industrial motor drives and servo systems
• Uninterruptible Power Supply (UPS) systems

Procurement Notes

Verify the specific suffix designation against official IXYS documentation to confirm exact pinout and thermal characteristics. Ensure compliance with RoHS directives as indicated in the manufacturer's product data sheet. Confirm that the TO-247-3 package matches the intended PCB footprint and mounting requirements for the target assembly.

Selection Notes

Select this component for applications requiring high voltage blocking capability combined with substantial continuous current handling. The 650 V rating suits medium-voltage AC/DC conversion stages. Evaluate thermal resistance constraints given the 750 W dissipation rating and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during peak load cycles.

Part Context

This device belongs to the IXYS IXYH series of discrete IGBTs, designed for general-purpose industrial power electronics. It represents an evolution in silicon planar trench gate technology, offering improvements over previous generations in terms of switching speed and thermal stability while maintaining compatibility with standard drive circuits.

Replacement Considerations

Direct substitutes may include other IXYS 650V 170A IGBTs in TO-247 packages such as the IXYH75N65C4 if higher class ratings are required. Cross-brand replacements must match the 650V Vceo, 170A Ic, and TO-247-3 form factor while verifying compatible gate charge and saturation voltage levels.