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Product Detailed Parameters
- Description：IGBT PT 650V 170A TO-247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：170 A
- Current - Collector Pulsed (Icm)：360 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：750 W
- Switching Energy：2.8mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：123 nC
- Td (on/off) @ 25°C：27ns/93ns
- Test Condition：400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr)：150 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH75N65C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing Silicon technology and XPT GenX3 architecture. It features a TO-247AD-3 package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 170 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a maximum gate-emitter voltage of ±30 V. Power dissipation reaches 750 W, with an operating temperature range from -55°C to +175°C.
Feature Summary
- Incorporates XPT (eXtended Plate Technology) for optimized trade-off between conduction and switching losses.
- Features GenX3 trench gate technology to enhance switching performance and ruggedness.
- Designed for high-power industrial applications requiring robust thermal management.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the specific suffix H1 against official datasheets to confirm pinout and mechanical dimensions match the intended PCB footprint. Ensure the component source is authorized to avoid counterfeit risks. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when high current handling at 650V is required in a standard through-hole package. Compare saturation voltage and thermal resistance against alternatives if space constraints exist. Consider the switching frequency capabilities relative to the application's thermal design limits.
Part Context
This part belongs to the IXYS IGH series of high-voltage IGBTs. It shares the XPT GenX3 platform with other models like IXYH75N65C3, differing primarily in packaging or suffix specifications. It serves as a core switching element in medium-to-high power conversion circuits.
Replacement Considerations
Direct substitutes may include IXYH75N65C3 or IXXH75N60C3, provided voltage ratings and current capacities meet or exceed original requirements. Verify pin compatibility and thermal characteristics before substitution.
