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The IXYH80N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT (eXtended Plate Technology) and GenX3 architecture to optimize switching performance and conduction losses. The device features a maximum collector-emitter voltage (VCEO) of 900 V and a continuous collector current (Ic) of 140 A at 25°C. It is housed in a TO-247AD-3 package designed for through-hole mounting, with a power dissipation rating of 750 W. The component operates within a temperature range of -55°C to +175°C junction temperature.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and electrical tolerances. Confirm RoHS compliance status directly from the product specification document prior to procurement. Cross-reference the part number with authorized distributors to validate authenticity and current availability status.
Select this component when a 900V blocking voltage and high continuous current handling are required. Ensure the application circuit can support the specified gate-emitter voltage limits. Verify that the thermal management system can dissipate up to 750 W to maintain junction temperatures within the rated operational range during peak load conditions.
This IGBT belongs to the IXYS IXYH series, which integrates GenX3 and XPT technologies. This series is engineered for medium to high-power applications requiring efficient switching and low conduction losses. The TO-247AD-3 package provides a standardized form factor for easy integration into existing power electronics designs.
Consult the official IXYS replacement guide for verified cross-references. Do not substitute with generic 900V IGBTs without verifying pinout compatibility, saturation voltage characteristics, and thermal resistance parameters.