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The IXYS IXYH90N65A5 is a GenX5™ trench IGBT utilizing XPT™ technology, designed for low-frequency high-current switching applications up to 10 kHz. It features a TO-247 package with the collector tab electrically connected to the collector terminal. Key electrical parameters include a maximum collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC110) of 90 A at a case temperature of 110°C. The device exhibits a maximum collector-emitter saturation voltage (VCE(sat)) of 1.35 V at IC = 60 A and VGE = 15 V. Thermal resistance from junction to case (RthJC) is specified at 0.23 °C/W.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the part number suffix matches the exact electrical characteristics required for the design. Ensure thermal management solutions align with the specified RthJC values to maintain safe operating temperatures during operation.
Select this component for designs requiring robust performance in high-current environments with moderate switching frequencies. Evaluate the square RBSOA for inductive load handling capabilities. Consider the low gate drive requirements when designing the driver circuitry to ensure efficient signal transmission without excessive power consumption.
This IGBT belongs to the IXYS GenX5™ family, which incorporates Extreme Light Punch Through (XPT™) technology. This specific generation focuses on optimizing the trade-off between conduction losses and switching speeds for industrial power electronics. The TO-247 form factor provides a standardized mounting solution compatible with common heatsink interfaces.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing footprints and thermal constraints before considering alternative components from other manufacturers.