IXYK110N120A4

$25.27

Description：IGBT PT 1200V 375A TO-264
Series：XPT™, GenX4™

SKU:0f718ad308f3 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 375A TO-264
Series：XPT™, GenX4™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：375 A
Current - Collector Pulsed (Icm)：900 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 110A
Power - Max：1360 W
Switching Energy：2.5mJ (on), 8.4mJ (off)
Input Type：Standard
Gate Charge：305 nC
Td (on/off) @ 25°C：42ns/550ns
Test Condition：600V, 50A, 1.5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264 (IXYK)
Grade：-
Qualification：-

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IXYK110N120A4

Overview

The IXYK110N120A4 is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the GenX4™ Trench IGBT series, designed for high-efficiency power switching applications. The device features a TO-264 (IXYK) through-hole package configuration. Key electrical parameters include a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 375A at 25°C. The saturation voltage is specified at 1.8V, with a maximum power dissipation capability of 1360W. The component operates within a temperature range from -55°C to +175°C junction temperature.

Feature Summary

Utilizes IXYS GenX4™ Trench IGBT technology for optimized low conduction losses.
Features XPT thin-wafer technology to achieve high gain and improved surge current capability.
Positive thermal coefficient of Vce(sat) simplifies parallel operation requirements.

Applications

Industrial motor drives
High-frequency power supplies
Inverter systems

Procurement Notes

Verify the specific ordering suffix against the official IXYS datasheet to confirm exact electrical characteristics and packaging options. Ensure that the procurement channel provides genuine components with traceable origin. Cross-reference the manufacturer part number with authorized distributor catalogs to validate availability and technical documentation accuracy before finalizing purchase orders.

Selection Notes

Select this component for applications requiring high current handling and robust switching performance in the 1200V class. The TO-264 package offers suitable thermal management for medium-to-high power density designs. Consider the specific gate charge requirements and drive capabilities when integrating into circuits to ensure optimal switching speed and efficiency without exceeding thermal limits.

Part Context

This device is part of IXYS's discrete IGBT portfolio, specifically leveraging the GenX4™ generation which combines trench gate architecture with XPT technology. This lineage focuses on reducing switching losses while maintaining high blocking voltage stability. The product line targets industrial and energy conversion markets where reliability and efficiency are critical operational parameters.