IXYK110N120B4

Overview

The IXYS IXYK110N120B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3™ family. It utilizes XPT thin-wafer technology for optimized performance. The device features a collector-emitter voltage rating of 1200 V and a continuous collector current of 110 A at 25°C. Maximum power dissipation is rated at 1360 W. It is housed in a TO-264 (D2PAK-3) through-hole package, designed for high-power switching applications requiring robust thermal management and low conduction losses.

Feature Summary

• Generates low conduction losses via XPT thin-wafer technology
• Provides high short-circuit withstand capability for system protection
• Features soft recovery fast ultrafast recovery diode integrated in anti-parallel configuration

Applications

• Industrial motor drives and inverters
• Uninterruptible Power Supply (UPS) systems
• High-frequency power supplies and welding equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and packaging type requirements with the supplier prior to purchase. Ensure thermal interface materials are compatible with the TO-264 package surface area for effective heat dissipation during operation.

Selection Notes

Select this component for applications demanding high voltage blocking and moderate current handling in a standard through-hole footprint. Evaluate the thermal resistance characteristics against the intended heatsink design. Compare saturation voltage and switching speed parameters against alternative GenX3 devices to balance efficiency and cost for the specific load profile.

Part Context

This discrete IGBT is part of IXYS' GenX3 portfolio, which integrates advanced trench gate technology with field-stop structures. The series targets medium-to-high power conversion needs, offering improved reliability compared to previous generations. It serves as a key switching element in circuits where compact size and high efficiency are critical constraints.

Replacement Considerations

Direct substitutes within the same family include the IXYK110N120A4. Verify pin compatibility and thermal specifications when cross-referencing with other manufacturers' 1200V TO-264 IGBTs. Ensure that gate charge and threshold voltage parameters match the existing driver circuit capabilities.