SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYK220N65A5 is a 650 V, 220 A Gen5 XPT™ IGBT manufactured by IXYS (Littelfuse). It utilizes proprietary thin-wafer technology and a Trench IGBT process to achieve reduced thermal resistance and low conduction losses. The device features a TO-264 (IXYK) package with a tab collector configuration. Key electrical parameters include a collector-emitter saturation voltage of 1.35 V at 100 A, a continuous collector current of 220 A at TC = 110 °C, and a maximum junction temperature of 175 °C. It is optimized for switching frequencies up to 5 kHz.
Verify the specific Littelfuse datasheet revision date against the manufacturing batch code to ensure component consistency. Confirm that the TO-264 package dimensions match the target PCB footprint requirements. Check for RoHS compliance status on the official documentation before finalizing procurement orders.
Select this component for high-power applications requiring robust surge handling and efficient thermal management. Ensure the gate driver can supply sufficient current to manage the 750 nC total gate charge effectively. Verify that the heatsinking solution maintains the case temperature within the specified limits for the desired continuous current rating.
This part belongs to the IXYS Gen5 XPT™ family of Insulated Gate Bipolar Transistors. It shares the same voltage class and packaging style as other high-current variants in the series but offers specific performance characteristics tailored for industrial power conversion and motor control applications.
Direct replacements must match the 650 V rating, TO-264 package, and similar saturation voltage characteristics. Cross-reference with other IXYS Gen5 IGBTs or equivalent industry-standard devices ensuring identical pinout and thermal resistance specifications.