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The IXYN100N120B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to achieve optimized performance for high-frequency switching applications. The device features an integrated anti-parallel ultra-fast diode, enhancing its utility in power conversion circuits. Key electrical parameters include a collector-emitter voltage of 1200V and a continuous collector current of 100A at 25°C. The component is housed in a TO-264 package with through-hole mounting capabilities.
Verify the specific suffix against official IXYS documentation to confirm pinout and internal diode characteristics. Ensure the ordering part number matches the exact technical requirements for your design. Cross-reference datasheet revisions to confirm compliance with current environmental standards such as RoHS before finalizing procurement.
Select this component for designs requiring robust high-voltage handling with integrated freewheeling capabilities. The 1200V rating suits industrial and commercial power systems. Consider the thermal management requirements associated with the TO-264 package when designing heat sinks for sustained operation at rated currents.
This IGBT belongs to the IXYS GenX3 family, which incorporates trench gate technology for improved switching speed and reduced gate charge. The XPT (eXtended Plate Technology) thin-wafer process allows for higher blocking voltages with lower on-state voltage drops compared to standard planar devices.
Direct replacements within the same series include IXYN100N120C3H1 or IXYB82N120C3H1, provided the current ratings and package compatibility align with the original design specifications.