IXYN100N120C3

IXYN100N120C3

$30.89
  • Description:IGBT MOD 1200V 152A 830W SOT227B
  • Series:XPT™, GenX3™

SKU:156b5eb7a2fb Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 152A 830W SOT227B
  • Series:XPT™, GenX3™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:3.5V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):152 A
  • Power - Max:830 W
  • Current - Collector Cutoff (Max):25 µA
  • Input Capacitance (Cies) @ Vce:6 nF @ 25 V

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IXYN100N120C3

Overview

The IXYN100N120C3 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT and GenX3 technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and supports switching frequencies up to 50 kHz. Packaged in the PLUS247 through-hole format, it offers a maximum power dissipation of 600 W and a low saturation voltage of 3.2 V. This component is designed for efficient power conversion with optimized switching characteristics.

Feature Summary

  • Optimized for low switching losses in high-frequency applications
  • Features an integrated anti-parallel ultra-fast diode
  • Provides square Reverse Bias Safe Operating Area (RBSOA)
  • Includes isolation voltage rating of 2500V~

Applications

  • High frequency power inverters
  • Uninterruptible Power Supplies (UPS)
  • Motor drives
  • Switching Mode Power Supplies (SMPS)

Procurement Notes

Verify the specific suffix 'C3' against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure the ordering documentation explicitly references the PLUS247 package type. Cross-reference the part number with official IXYS or Littelfuse catalogs to validate current production status and regional availability constraints before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust 1200 V blocking capability combined with high current handling. The integrated fast recovery diode simplifies circuit topology by eliminating external freewheeling components. Verify that the thermal management system can dissipate the rated 600 W power loss under worst-case operating conditions to maintain junction temperatures within the specified safe limits.

Part Context

This device belongs to the IXYS 1200V XPT IGBTs GenX3 series, which utilizes thin-wafer technology to enhance performance. The PLUS247 package provides a standardized footprint compatible with international standards, facilitating easy integration into existing PCB layouts and heatsink structures commonly used in industrial power electronics.

Replacement Considerations

Potential substitutes include the IXYN100N120C3H1, which adds a built-in diode but differs in package configuration. Other family members like the IXYN82N120C3 offer similar electrical ratings but with lower current capacity. Always verify pinout and thermal resistance parameters when considering alternative part numbers.

IXYN100N120C3IXYN100N120C3
$30.89
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