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The IXYN100N65C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to achieve high performance in power switching applications. The device features a collector-emitter voltage rating of 650 V and a continuous collector current of 100 A at 25°C. It operates within a temperature range of -55°C to +175°C, with a maximum power dissipation of 600 W. The component is housed in a PLUS247 package designed for screw mounting.
Verify the specific suffix H1 against official datasheets to confirm pinout and thermal characteristics. Ensure the supplier provides traceable documentation matching the manufacturer's specifications. Cross-reference the part number with authorized distributor lists to avoid counterfeit components.
Select this component for applications requiring 650V blocking capability and 100A current handling. The PLUS247 package suits designs needing efficient heat sinking via screw mounting. Evaluate thermal resistance requirements against the 600W dissipation limit for the target operating environment.
This IGBT belongs to the IXYS high-power discrete transistor lineup. It shares architectural similarities with other C3-series devices but offers specific current and voltage ratings tailored for medium-power industrial converters. The H1 suffix typically denotes specific manufacturing lot or packaging variations defined by the original equipment manufacturer.
Direct replacements include the IXYN100N65C3 if the H1 suffix indicates only packaging differences. Verify thermal interface compatibility when substituting with similar PLUS247 packages from other manufacturers.