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The IXYN110N120A4 is a 1200V N-channel IGBT utilizing GenX4 technology and XPT thin-wafer design. It operates in the SOT-227B miniBLOC package with an aluminum nitride insulator. Key electrical parameters include a maximum collector-emitter voltage (VCES) of 1200V, a continuous collector current (IC110) of 110A at 110°C case temperature, and a saturated collector-emitter voltage (VCE(sat)) of 1.80V maximum at IC=110A and VGE=15V. The device features a typical turn-off fall time (tfi) of 300ns and supports junction temperatures from -55°C to +175°C.
Verify component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm the package type matches the SOT-227B miniBLOC form factor. Ensure the ordering suffix corresponds to the standard configuration without undocumented modifications. Cross-reference the part number with Littelfuse or authorized distributors to confirm availability and lead times.
Select this component for applications requiring high current handling capability up to 110A at elevated temperatures. The 1200V rating suits medium-voltage industrial systems. Consider the thermal resistance values for heatsink design. Evaluate switching energy losses against the specific gate resistance and junction temperature requirements of the target circuit topology.
This device belongs to the IXYS GenX4 family of ultra low-Vsat PT IGBTs. It is designed for switching frequencies up to 5kHz. The series emphasizes high efficiency through reduced conduction and switching losses. The miniBLOC packaging provides robust mechanical stability and high isolation voltage capabilities for demanding power electronics environments.
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, match the 1200V VCES, 110A IC110, and SOT-227B package dimensions. Verify that the replacement maintains comparable VCE(sat) and switching characteristics to ensure circuit performance parity.
The device supports an isolation voltage of 2500V~ at 50/60Hz for 1 minute.
The IGBT exhibits a positive thermal coefficient of Vce(sat), which aids in current sharing when devices are operated in parallel.
The typical turn-off fall time (tfi) is specified as 300ns under standard test conditions.