IXYN110N120C4

Overview

The IXYN110N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX3 generation of trench IGBTs. The device features a TO-247-PLUS-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 110 A at 25°C. The typical collector-emitter saturation voltage (VCEsat) is 2.6 V, with a maximum power dissipation (Pd) of 800 W. The component operates within a temperature range from -55°C to +175°C.

Feature Summary

• Incorporates IXYS XPT (eXtended Plateau Technology) thin-wafer structure for optimized trade-off between conduction losses and switching performance.
• Utilizes GenX3 Trench IGBT technology to achieve low saturation voltage and improved switching characteristics compared to previous generations.
• Features an isolated tab design in the TO-247-PLUS-3 package, facilitating efficient thermal management and high-voltage isolation.

Applications

• High-frequency power supplies and inverters
• Motor control drives and servo amplifiers
• Uninterruptible Power Supplies (UPS)
• Industrial welding equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original packaging to prevent counterfeit components. Cross-reference the part number with the latest revision history to account for any manufacturing updates or regional compliance variations before finalizing orders.

Selection Notes

Select this component when designing circuits requiring robust high-voltage blocking capabilities combined with moderate current handling in a standard through-hole form factor. The 1200 V rating suits applications connected to medium-voltage AC lines. Evaluate the thermal resistance requirements of the heat sink system against the 800 W dissipation limit to ensure reliable operation under continuous load conditions without exceeding the junction temperature threshold.

Part Context

This device is part of IXYS' broader portfolio of high-voltage discrete semiconductors, specifically the IXYN series which focuses on industrial-grade performance. It serves as a replacement for older generation IGBTs in existing designs where higher efficiency or lower switching losses are required. The TO-247-PLUS-3 package ensures mechanical compatibility with legacy board layouts while offering improved thermal conductivity over standard TO-247 variants.

Replacement Considerations

Direct replacements may include other IXYS GenX3 devices such as the IXYH110N120C4 or IXYX110N120C4, provided the package and pinout match. Verify that substitute parts maintain equivalent VCEsat and switching energy values to preserve circuit timing and thermal profiles.