IXYN180N65A5

Overview

The IXYN180N65A5 is a 650 V, 180 A Gen5 XPT™ Insulated Gate Bipolar Transistor manufactured by Littelfuse. It utilizes Extreme Light Punch Through technology and a Trench IGBT process to achieve low conduction losses and reduced thermal resistance. The device features a square Reverse Biased Safe Operating Area (RBSOA) and optimized gate drive requirements suitable for switching frequencies up to 5 kHz. Key electrical parameters include a collector-emitter saturation voltage of ≤ 1.35 V at 100 A, a continuous collector current of 180 A at TC = 110°C, and a maximum junction temperature of 175°C. It is housed in an international standard SOT-227B package with an isolated baseplate.

Feature Summary

• Optimized for low conduction losses using proprietary XPT thin-wafer technology
• Features a square Reverse Biased Safe Operating Area (RBSOA) for robust hard switching
• High surge current capability with a pulsed collector current rating of 1100 A
• Low gate charge and low gate drive requirement for efficient control

Applications

• Power Inverters
• Uninterruptible Power Supplies (UPS)
• Active Power Factor Correction (PFC) Circuits
• Battery Chargers
• Welding Machines

Procurement Notes

Verify the manufacturer designation as Littelfuse, which acquired IXYS, when sourcing this component. Confirm the specific SOT-227B package outline and pinout configuration, noting that either emitter terminal can function as the main or Kelvin emitter. Ensure compliance with RoHS standards and check for any recent datasheet revisions regarding thermal characteristics or maximum ratings before finalizing procurement specifications.

Selection Notes

Select the IXYN180N65A5 for applications requiring high current density and low conduction losses at switching frequencies up to 5 kHz. The device's square RBSOA makes it suitable for inductive load clamping without snubber diodes. Consider the thermal resistance values and mounting torque requirements (1.5 Nm) when designing the heat sink interface. Verify that the gate drive circuitry supports the specified threshold voltage range and total gate charge characteristics for optimal switching performance.

Part Context

This component belongs to the Gen5 XPT™ IGBT family from Littelfuse (formerly IXYS). It represents an evolution in power semiconductor technology designed to replace older non-punch-through devices. The integration of trench gate technology with thin-wafer processing allows for improved efficiency in medium-power industrial and automotive applications compared to previous generation planar IGBTs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, ensure the replacement matches the 650 V rating, 180 A continuous current capability, and SOT-227B package dimensions. Verify that the substitute device offers comparable thermal resistance and reverse biased safe operating area characteristics.