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Product Detailed Parameters
- Description：IGBT PT 650V 470A SOT-227B
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：470 A
- Current - Collector Pulsed (Icm)：1600 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 100A
- Power - Max：1500 W
- Switching Energy：7.8mJ (on), 4.7mJ (off)
- Input Type：Standard
- Gate Charge：565 nC
- Td (on/off) @ 25°C：42ns/190ns
- Test Condition：400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：125 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Grade：-
- Qualification：-
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Overview
The IXYN300N65A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GENX3 series, utilizing XPT technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 270 A at 25°C. The device is housed in an SOT-227B-4 package with screw mount installation. Key electrical parameters include a power dissipation rating of 1.5 kW and a collector-emitter saturation voltage of 2.1 V. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates XPT (eXtended Plateau Technology) for optimized switching performance and reduced tail current.
- Designed with GENX3 architecture for high reliability and robust short-circuit capability.
- Utilizes SOT-227B-4 packaging to facilitate efficient thermal management via screw mounting.
Applications
- Industrial motor drives and inverters
- High-power welding equipment
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm specifications match the IXYN300N65A3 model. Ensure proper handling procedures are followed due to the sensitivity of semiconductor devices during storage and installation.
Selection Notes
Select this component for applications requiring high current capacity and low conduction losses in medium-frequency switching environments. Compare the 270 A current rating and 1.5 kW power dissipation against system thermal constraints. Ensure the gate drive circuit supports the required voltage levels for optimal switching characteristics.
Part Context
This part belongs to the IXYS GENX3 family of IGBTs, which are engineered for high-efficiency power conversion. The XPT technology distinguishes it by offering a favorable trade-off between conduction and switching losses, making it suitable for demanding industrial power electronics applications where reliability is critical.
Replacement Considerations
Direct replacements must match the 650V/270A rating and SOT-227B-4 package. Verify pinout compatibility and thermal resistance values. Consult IXYS documentation for updated alternatives within the GENX3 series if availability is constrained.
