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The IXYS IXYN30N170CV1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current (Ic) of 30 A. The device utilizes the PLUS247 through-hole package, which facilitates efficient thermal management. Key electrical parameters include a maximum collector-emitter saturation voltage (VceSAT) of 4 V and a gate-emitter voltage rating (VGEO) of ±20 V. The component supports a maximum power dissipation (Pd) of 937 W and operates within a junction temperature range from -55°C to +175°C.
Verify the specific suffix CV1 against official IXYS documentation to confirm pinout configuration and packaging details. Ensure compatibility with existing thermal interface materials and mounting hardware requirements for the PLUS247 form factor before integration into production designs.
Select this component when a 1700 V rating is required alongside moderate current handling in a through-hole format. Compare the 4 V saturation voltage against alternative packages to evaluate thermal resistance trade-offs. Confirm that the 30 A continuous current rating aligns with the peak load demands of the target circuit application.
This part belongs to the IXYS High Voltage IGBT series, specifically engineered for robust performance in medium-power conversion systems. The PLUS247 package variant offers a balance between current capacity and thermal efficiency, distinguishing it from smaller surface-mount alternatives or higher-current TO-247AD versions.
Direct substitutes may include other IXYS 1700 V IGBTs in the PLUS247 package, such as the IXYX30N170CV1, provided pinouts and electrical characteristics match exactly. Verify thermal resistance values and saturation voltages when considering cross-brand replacements.