IXYN50N170CV1

Overview

The IXYS IXYN50N170CV1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power applications. It features a collector-emitter voltage rating of 1700 V and a continuous collector current capacity of 120 A. The device is housed in a SOT-227B chassis mount package, facilitating robust thermal management. Key electrical parameters include a maximum collector-emitter saturation voltage of 4 V and a maximum power dissipation of 880 W. It operates within a temperature range of -55°C to 175°C.

Feature Summary

• High voltage capability with 1700 V collector-emitter breakdown rating
• High current handling with 120 A continuous collector current specification
• Robust thermal performance supporting up to 880 W power dissipation
• Chassis mount construction for efficient heat sinking and mechanical stability

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supply (UPS) systems
• High-frequency power conversion circuits
• Welding equipment power stages

Procurement Notes

Verify the specific suffix 'CV1' against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original manufacturer documentation to validate the component's authenticity and compliance with RoHS standards before integration into production designs.

Selection Notes

Select this component when designing circuits requiring high voltage isolation and substantial current handling capabilities. The SOT-227B package necessitates a chassis mounting strategy rather than standard PCB through-hole or surface-mount techniques. Evaluate thermal resistance requirements carefully to ensure the heatsinking solution can manage the 880 W dissipation limit under peak operating conditions.

Part Context

This IGBT belongs to IXYS's high-voltage discrete transistor lineup, targeting industrial power electronics. It complements other devices in the series by offering a balance of high blocking voltage and significant current capacity. The technology is optimized for efficiency in medium-to-high power conversion applications where reliability under harsh electrical stress is critical.

Replacement Considerations

Direct substitutes must match the 1700 V rating, 120 A current capacity, and SOT-227B package form factor. Verify that any alternative device maintains compatible gate threshold voltages and switching speeds to ensure circuit stability without redesigning the drive logic.

FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is specified as 4 V.

Is this device suitable for automotive applications?

No, the specifications indicate it does not meet automotive standards.