ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 650V 32A TO-220
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：32 A
- Current - Collector Pulsed (Icm)：62 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 10A
- Power - Max：160 W
- Switching Energy：300µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：20 nC
- Td (on/off) @ 25°C：17ns/125ns
- Test Condition：400V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr)：29 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The IXYS IXYP10N65B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT-GenX3 technology. It features a TO-220AB/FP package with through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 10 A at 25°C, with a peak pulsed current rating of 40 A. The saturation voltage is specified at 2.27 V under standard test conditions. Power dissipation reaches 53 W, and the component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Optimized for switching frequencies between 5 kHz and 30 kHz
- Utilizes XPT-GenX3 technology for enhanced performance
- Designed for low conduction losses in power applications
Applications
- Switch-mode power supplies
- Motor control drives
- High-frequency inverters
Procurement Notes
Verify the specific suffix D1 against official datasheets to confirm pinout and thermal characteristics. Ensure the supplier provides traceable documentation matching the IXYS manufacturer part number. Cross-reference the Mouser catalog number 747-IXYP10N65B3D1 for accurate identification during sourcing.
Selection Notes
Select this component for designs requiring moderate current handling up to 10 A with optimized switching efficiency in the 5–30 kHz range. Compare against the IXYP10N65C3D1M if higher frequency operation up to 60 kHz is required. Verify that the TO-220AB/FP package fits the thermal management constraints of the target application.
Part Context
This IGBT belongs to the IXYS XPT-GenX3 family, which integrates advanced trench gate technology with Light Punch Through structures. This series targets efficient power conversion in compact form factors. The IXYP10N65B3D1 serves as a discrete solution for medium-power applications where switching speed and conduction loss balance are critical design parameters.
Replacement Considerations
The IXYP10N65C3D1M is documented as an optimized alternative for higher frequency switching up to 60 kHz. Direct substitution requires verification of thermal resistance and gate drive compatibility.
