IXYP15N65C3D1

IXYP15N65C3D1

$1.42
  • Description:IGBT PT 650V 38A TO-220-3
  • Series:GenX3™, XPT™

SKU:a3fce718c218 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 650V 38A TO-220-3
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):38 A
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 15A
  • Power - Max:200 W
  • Switching Energy:270µJ (on), 230µJ (off)
  • Input Type:Standard
  • Gate Charge:19 nC
  • Td (on/off) @ 25°C:15ns/68ns
  • Test Condition:400V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr):110 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXYP15N65C3D1

Overview

The IXYS IXYP15N65C3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT-GenX3 technology. It is housed in a TO-220-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C, with a peak pulsed current rating of 50 A. Key electrical parameters include a collector-emitter saturation voltage of 2.27 V, a gate-emitter leakage current of 100 nA, and a power dissipation capacity of 53 W. It operates within a temperature range of -55°C to +175°C junction temperature.

Feature Summary

  • Incorporates XPT-GenX3 technology for optimized switching performance and reduced conduction losses.
  • Designed for robust operation with a high maximum junction temperature rating of +175°C.
  • Features a standard single configuration suitable for various discrete switching applications.

Applications

  • High-frequency power switching circuits
  • Motor drive inverters
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official IXYS documentation to ensure component authenticity. Confirm that the package type matches the required through-hole footprint and that the thermal characteristics align with the intended heat sink design before finalizing procurement orders.

Selection Notes

Select this component when a 650 V IGBT with moderate current handling is required for through-hole assemblies. Compare the 2.27 V saturation voltage and 53 W power dissipation limits against the system's thermal management capabilities. Ensure the gate drive voltage specifications are compatible with the -20 V to +20 V operating range defined in the datasheet.

Part Context

This part belongs to the IXYS IXYP series of XPT-GenX3 IGBTs, which are engineered for efficiency in medium-power applications. The TO-220-3 package provides a balance between thermal performance and ease of manual or automated assembly. It serves as a discrete solution for designs requiring reliable switching without the complexity of integrated modules.

Replacement Considerations

Direct replacements must match the 650 V rating, TO-220-3 package, and similar saturation voltage characteristics. Verify pinout compatibility and thermal resistance values to ensure seamless integration into existing PCB layouts without redesigning the cooling infrastructure.

IXYP15N65C3D1IXYP15N65C3D1
$1.42
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