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The IXYS IXYP15N65C3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT-GenX3 technology. It is housed in a TO-220-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C, with a peak pulsed current rating of 50 A. Key electrical parameters include a collector-emitter saturation voltage of 2.27 V, a gate-emitter leakage current of 100 nA, and a power dissipation capacity of 53 W. It operates within a temperature range of -55°C to +175°C junction temperature.
Verify the specific ordering suffix and manufacturer lot codes against official IXYS documentation to ensure component authenticity. Confirm that the package type matches the required through-hole footprint and that the thermal characteristics align with the intended heat sink design before finalizing procurement orders.
Select this component when a 650 V IGBT with moderate current handling is required for through-hole assemblies. Compare the 2.27 V saturation voltage and 53 W power dissipation limits against the system's thermal management capabilities. Ensure the gate drive voltage specifications are compatible with the -20 V to +20 V operating range defined in the datasheet.
This part belongs to the IXYS IXYP series of XPT-GenX3 IGBTs, which are engineered for efficiency in medium-power applications. The TO-220-3 package provides a balance between thermal performance and ease of manual or automated assembly. It serves as a discrete solution for designs requiring reliable switching without the complexity of integrated modules.
Direct replacements must match the 650 V rating, TO-220-3 package, and similar saturation voltage characteristics. Verify pinout compatibility and thermal resistance values to ensure seamless integration into existing PCB layouts without redesigning the cooling infrastructure.