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The IXYS IXYP20N120A4 is a high-performance XPT™, GenX4™ series IGBT designed for demanding power applications. This discrete IGBT features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 80 A. It utilizes a standard input type with a gate charge of 46 nC. The device supports through-hole mounting in a TO-220-3 package. Maximum power dissipation is rated at 375 W, with a maximum collector-emitter saturation voltage of 1.9 V at specified conditions.
Verify the specific ordering suffix against official IXYS documentation to ensure the correct variant is selected. Confirm that the TO-220-3 package dimensions match the target PCB layout requirements. Cross-reference the electrical parameters with the latest datasheet to ensure compliance with system design specifications before finalizing procurement decisions.
Select this component when a 1200 V rating and 80 A continuous current capability are required for high-power switching tasks. The TO-220-3 package is appropriate for applications where through-hole assembly is preferred over surface mount alternatives. Evaluate thermal management needs based on the 375 W power dissipation rating to ensure reliable operation under load conditions.
This part belongs to the IXYS discrete IGBT portfolio, specifically within the XPT™, GenX4™ series. These devices are engineered for robustness and efficiency in medium to high-power electronic systems. The IXYP20N120A4 represents a standard configuration within this family, offering a balance of voltage handling and current capacity for industrial-grade power electronics.
Consult official substitution guides for compatible parts with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or series replacements.