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Product Detailed Parameters
- Description：IGBT DISCRETE TO-220
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IXYS IXYP30N120C4 is a single N-channel Power MOSFET utilizing XPT (eXtended Plate Technology) and Trench technology. It features a TO-247-3 package designed for through-hole mounting. The device supports a maximum drain-source voltage of 1200 V and a continuous drain current of 30 A at 25°C. Key electrical parameters include a maximum on-resistance of 600 mΩ, a gate threshold voltage range of 3.5 V to 5.5 V, and a total gate charge of 80 nC. Thermal performance is characterized by a junction-to-case thermal resistance of 0.9 K/W and a maximum power dissipation of 400 W. The component operates within a temperature range of -55°C to +175°C.
Feature Summary
- Integrates XPT thin-wafer technology with Trench MOS architecture to optimize switching speed and conduction losses.
- Engineered with enhanced avalanche ruggedness to withstand high-energy transient events in inductive load applications.
- Utilizes a low-inductance TO-247-3 package design to minimize parasitic effects during high-frequency switching operations.
Applications
- High-voltage DC-DC converters
- Motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix 'C4' against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Request the official datasheet directly from IXYS or authorized distributors to validate current production status and lead times before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring high blocking voltage combined with moderate current handling capabilities. The 1200V rating suits industrial and automotive environments where voltage spikes are common. Compare the 600 mΩ on-resistance against system efficiency targets to determine if heatsinking requirements align with the 400W dissipation limit under expected duty cycles.
Part Context
This device belongs to the IXYS IXYP series of high-voltage discrete MOSFETs. The series is distinguished by its focus on reliability in harsh electrical environments. The IXYP30N120C4 represents a specific current and voltage class within this lineup, offering a balance between low on-state resistance and fast switching characteristics suitable for medium-power conversion topologies.
Replacement Considerations
Cross-reference with other IXYS models such as the IXFH series or IXFN series for similar voltage and current ratings. Verify that any substitute maintains compatible gate charge levels and thermal resistance values. Check for package pinout equivalence to avoid redesigning the printed circuit board layout during replacement.
