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The IXYP30N65C3 is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, belonging to the XPT C3-Class series. It features a single configuration housed in a TO-247AD-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 300 W. The component operates within a temperature range from -55°C to +175°C, with a maximum gate-emitter voltage limit of ±20 V.
Verify the specific manufacturer datasheet for the IXYP30N65C3 to confirm exact pinout compatibility and thermal resistance values before integration. Ensure that the sourcing channel provides original components with traceable documentation to guarantee authenticity and adherence to the specified C3-class standards.
Select this component when a 650V IGBT with moderate current handling is required in a through-hole format. Compare its 30A continuous current rating against system load requirements. Consider the TO-247AD-3 package for adequate heat sinking capabilities relative to the 300W dissipation rating in the intended application environment.
This part belongs to the IXYS IXYH/IXYA/IXYP series of XPT IGBTs. While similar models like IXYH40N65C3 share the same voltage class and packaging style, the IXYP30N65C3 is distinguished by its specific 30A current rating. It serves as a specialized option within the broader portfolio for applications balancing voltage withstand capability with specific current constraints.
Publicly confirmed substitute part numbers for the IXYP30N65C3 are not available in the provided reference data. Verify cross-compatibility with other 650V 30A TO-247 IGBTs only after consulting official manufacturer substitution guides.