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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 90A TO-220
- Series：Gen5 XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：190 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：326 W
- Switching Energy：230µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：96 nC
- Td (on/off) @ 25°C：21ns/122ns
- Test Condition：300V, 20A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220 (IXYP)
- Grade：-
- Qualification：-
Download product information
Overview
The IXYS IXYP35N65C5 is a Gen5 XPT IGBT featuring Extreme Light Punch Through technology for switching frequencies between 20 and 60 kHz. It provides a collector-emitter voltage of 650 V and a continuous collector current of 35 A at 110°C. The device exhibits a typical saturation voltage of 2.0 V and a turn-off fall time of 28 ns. Packaged in an international standard TO-220-3L, it offers low thermal resistance and high surge current capability.
Feature Summary
- Optimized for 20–60 kHz switching applications
- Positive thermal coefficient of VCE(sat)
- High surge current capability with square RBSOA
Applications
- Power Inverters
- Motor Drives
- SMPS
- Welding Machines
Procurement Notes
Verify the specific ordering suffix against Littelfuse documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet revision date to confirm the electrical characteristics match your design constraints before finalizing procurement.
Selection Notes
Select this component for designs requiring efficient operation in the 20–60 kHz range. The positive thermal coefficient aids in parallel operation without active current sharing. Verify that the gate drive circuit can supply the required 15 V level to achieve optimal conduction losses and switching performance within the specified junction temperature limits.
Part Context
This part belongs to the IXYS Gen5 XPT family of Insulated Gate Bipolar Transistors. These devices utilize proprietary thin-wafer technology to reduce thermal resistance and energy losses. The series is designed to replace older generation IGBTs in medium-power industrial applications requiring fast switching speeds.
Replacement Considerations
Check pinout compatibility with existing TO-220-3L footprints. Compare VCE(sat) and switching times against legacy parts to ensure thermal management remains adequate. Confirm that the replacement device supports the same maximum junction temperature and gate-emitter voltage ratings.
