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The IXYS IXYP8N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology. It features a maximum collector-emitter voltage of 900 V and a continuous collector current of 8 A at 25°C. The device employs XPT (Extra-Punch-Through) technology to optimize switching performance and conduction losses. It is housed in a TO-252-3 (DPAK) surface-mount package designed for through-hole or SMD installation styles, with a maximum power dissipation of 125 W. The component operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix C3 against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the ordering documentation explicitly references the IXYP8N90C3 part number to avoid confusion with similar series components. Confirm RoHS compliance status if required by your manufacturing standards.
Select this component when a 900V IGBT is required in a TO-252-3 package. Compare the 8A current rating and 125W power dissipation against circuit requirements. Consider the XPT technology benefits for efficiency in hard-switching applications. Verify thermal management capabilities for the chosen PCB layout.
This device belongs to the IXYS IXYP series of high-voltage IGBTs. It shares the XPT technology platform with other IXYS components like the IXYH and IXXH series but differs in packaging and current ratings. The TO-252-3 package distinguishes it from the larger TO-247 variants found in the same voltage class.
Publicly confirmed direct substitute part numbers are not available in the provided source data. Engineers should consult official cross-reference guides or contact the manufacturer for qualified alternatives that match the 900V, 8A, TO-252-3 specifications.