IXYP8N90C3

IXYP8N90C3

$1.23
  • Description:IGBT 900V 20A TO-220-3
  • Series:GenX3™, XPT™

SKU:77e83309ef1a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 900V 20A TO-220-3
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):900 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):48 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 8A
  • Power - Max:125 W
  • Switching Energy:460µJ (on), 180µJ (off)
  • Input Type:Standard
  • Gate Charge:13.3 nC
  • Td (on/off) @ 25°C:16ns/40ns
  • Test Condition:450V, 8A, 30Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Download product information

IXYP8N90C3

Overview

The IXYS IXYP8N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology. It features a maximum collector-emitter voltage of 900 V and a continuous collector current of 8 A at 25°C. The device employs XPT (Extra-Punch-Through) technology to optimize switching performance and conduction losses. It is housed in a TO-252-3 (DPAK) surface-mount package designed for through-hole or SMD installation styles, with a maximum power dissipation of 125 W. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Incorporates XPT (Extra-Punch-Through) technology for optimized trade-off between low saturation voltage and fast switching times.
  • Designed for high-voltage applications requiring robust performance in compact surface-mount packages.
  • Features a rugged silicon structure capable of withstanding high thermal cycling and mechanical stress.

Applications

  • High-frequency switch-mode power supplies
  • Motor control inverters
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix C3 against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the ordering documentation explicitly references the IXYP8N90C3 part number to avoid confusion with similar series components. Confirm RoHS compliance status if required by your manufacturing standards.

Selection Notes

Select this component when a 900V IGBT is required in a TO-252-3 package. Compare the 8A current rating and 125W power dissipation against circuit requirements. Consider the XPT technology benefits for efficiency in hard-switching applications. Verify thermal management capabilities for the chosen PCB layout.

Part Context

This device belongs to the IXYS IXYP series of high-voltage IGBTs. It shares the XPT technology platform with other IXYS components like the IXYH and IXXH series but differs in packaging and current ratings. The TO-252-3 package distinguishes it from the larger TO-247 variants found in the same voltage class.

Replacement Considerations

Publicly confirmed direct substitute part numbers are not available in the provided source data. Engineers should consult official cross-reference guides or contact the manufacturer for qualified alternatives that match the 900V, 8A, TO-252-3 specifications.

IXYP8N90C3IXYP8N90C3
$1.23
Buy Now