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Product Detailed Parameters
- Description：IGBT PT 650V 86A TO-3P
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：86 A
- Current - Collector Pulsed (Icm)：195 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：300 W
- Switching Energy：800µJ (on), 700µJ (off)
- Input Type：Standard
- Gate Charge：68 nC
- Td (on/off) @ 25°C：20ns/140ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The IXYQ40N65B3D1 is a silicon-based N-channel Power MOSFET manufactured by IXYS. It utilizes the X2-Class technology and is housed in a TO-252-3 (DPAK) surface-mount package. The device features a drain-source breakdown voltage of 650 V and a continuous drain current of 40 A at 25°C. Key electrical parameters include a maximum on-resistance of 175 mΩ, a gate threshold voltage ranging from 2 V to 4 V, and a total gate charge of 48 nC. It supports an operating junction temperature range from -55°C to +175°C with a power dissipation rating of 125 W.
Feature Summary
- X2-Class technology designed for high reliability and robust performance under harsh conditions.
- Low on-resistance optimized for efficient power switching applications.
- Enhanced thermal stability allowing operation up to 175°C junction temperature.
Applications
- High-frequency DC-DC converters
- Motor control circuits
- Power factor correction stages
Procurement Notes
Verify the specific suffix D1 against the manufacturer's official datasheet to confirm pinout configuration and marking codes. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Cross-reference RoHS compliance status directly with the supplier's declaration documents prior to procurement.
Selection Notes
Select this component when a 650V rated MOSFET in a compact TO-252-3 package is required. Compare the 175 mΩ on-resistance against system conduction loss requirements. Verify that the 40 A current rating aligns with peak load demands while accounting for thermal derating at elevated ambient temperatures.
Part Context
This part belongs to the IXYS X2-Class series of silicon MOSFETs. These devices are engineered for general-purpose power switching where high voltage blocking capability and moderate current handling are necessary within a small surface-mount form factor.
Replacement Considerations
Direct replacements must match the 650V/40A specification and TO-252-3 package. Verify pin compatibility and on-resistance values before substitution. Consult manufacturer cross-reference guides for validated alternatives.
