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Product Detailed Parameters
- Description：IGBT
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 40A
- Power - Max：300 W
- Switching Energy：830µJ (on), 650µJ (off)
- Input Type：Standard
- Gate Charge：66 nC
- Td (on/off) @ 25°C：23ns/110ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The IXYQ40N65C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to optimize switching performance and conduction losses. The device features a TO-247AD-3 through-hole package, suitable for high-power applications. Key electrical parameters include a collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25°C. The saturation voltage is typically 1.96 V, with a maximum power dissipation of 200 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates XPT technology for optimized trade-off between conduction and switching losses.
- Utilizes GenX3 trench gate structure for improved switching speed and low gate charge.
- Designed for robust operation in high-temperature environments up to 175°C junction temperature.
Applications
- High-frequency switch-mode power supplies
- Motor control drives and inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix D1 against official IXYS documentation to confirm pinout and thermal characteristics. Ensure sourcing channels provide valid datasheets matching the IXYQ40N65C3D1 designation. Cross-reference manufacturer part numbers to avoid confusion with similar series components like IXYH or IXYA variants.
Selection Notes
Select this component for designs requiring 650V blocking capability with moderate current handling. Compare saturation voltage and gate charge requirements against alternative IGBT families. Confirm that the TO-247AD-3 package fits the thermal management strategy and PCB layout constraints of the target application.
Part Context
This model belongs to the IXYS IXYQ series, which integrates advanced trench gate and XPT technologies. It is part of a broader portfolio of discrete power semiconductors designed for industrial and consumer electronics markets. The series emphasizes efficiency and reliability in power conversion applications.
Replacement Considerations
Potential substitutes include other IXYS 650V IGBTs in TO-247 packages such as the IXYH40N65C3D1 or IXXH40N65B4. Verify pin compatibility and electrical parameters before substitution. Consult official replacement guides for cross-references.
