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Product Detailed Parameters
- Description：IGBT 1200V 56A ISOPLUS247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：56 A
- Current - Collector Pulsed (Icm)：210 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 50A
- Power - Max：290 W
- Switching Energy：3mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：28ns/133ns
- Test Condition：600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：195 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：ISOPLUS247™
- Grade：-
- Qualification：-
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Overview
The IXYR50N120C3D1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 50 A at 25°C. The device utilizes XPT technology to optimize the trade-off between conduction losses and switching performance, making it suitable for frequencies up to 50 kHz. Packaged in a TO-247-3 through-hole housing, it includes an integrated anti-parallel diode. Key electrical parameters include a maximum power dissipation of 460 W, a saturation voltage of approximately 2.8 V, and a gate-emitter voltage limit of ±20 V.
Feature Summary
- Integrated anti-parallel diode for simplified circuit design
- XPT technology for optimized switching and conduction efficiency
- High-speed operation capability for medium-frequency applications
Applications
- Motor drive inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific suffix D1 indicates the integrated diode configuration against official datasheets. Confirm thermal resistance values for your heatsink design. Check RoHS compliance status as per the latest manufacturer documentation. Ensure the TO-247 package dimensions match your PCB footprint requirements before ordering.
Selection Notes
Select this component when a 1200 V blocking voltage and 50 A current capacity are required in a single package with a freewheeling diode. Compare total loss characteristics against standard IGBTs if switching speeds above 50 kHz are needed. Verify that the gate drive voltage range supports the specified ±20 V limit for reliable operation.
Part Context
This part belongs to the IXYS GenX3 series of high-speed IGBTs. It is designed for applications requiring fast switching times and low turn-off tail current. The series typically targets industrial power conversion and motor control markets where efficiency and reliability are critical.
Replacement Considerations
Direct replacements may include other IXYS GenX3 devices with similar ratings, such as the IXYH50N120C3D1 or IXYR50N120C3. Cross-brand substitutes require careful verification of pinout compatibility, thermal characteristics, and switching energy parameters.
