IXYT30N65C3H1HV

Overview

The IXYT30N65C3H1HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology and features a TO-268AA surface-mount package. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 60 A. Key electrical parameters include a power dissipation rating of 270 W, a gate-emitter leakage current of 100 nA, and an operating temperature range from -55°C to +175°C.

Feature Summary

• Utilizes IXYS GenX3 technology for optimized switching performance
• Designed for high-efficiency surface-mount applications
• Capable of withstanding elevated operating temperatures up to 175°C

Applications

• High-frequency power conversion circuits
• Industrial motor drive systems
• Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify the specific suffix H1HV against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure that the TO-268AA package dimensions align with the target PCB footprint. Cross-reference the manufacturer's latest documentation to validate the component's active status and any potential design-in restrictions before finalizing procurement plans.

Selection Notes

Select this component when a robust surface-mount IGBT is required for medium-power applications. The 650V rating suits general industrial inverter topologies. Consider the 270W dissipation limit relative to the available heatsinking capacity. The wide temperature range allows operation in demanding environments without derating constraints typical of lower-grade devices.

Part Context

This part belongs to the IXYS GenX3 family, which represents advanced silicon planar trench gate technology. The series focuses on reducing switching losses while maintaining low conduction voltage drops. The TO-268AA form factor provides a balance between thermal management and compact board integration for modern power electronics designs.

Replacement Considerations

Direct substitutes within the same GenX3 family should be evaluated based on identical voltage and current ratings. Verify that alternative packages maintain compatible thermal resistance values. Check for minor parameter variations in saturation voltage or gate charge that might impact driver requirements.