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Product Detailed Parameters
- Description：IGBT PT 1200V 140A TO-268HV
- Series：XPT™, GenX4™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：275 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 32A
- Power - Max：600 W
- Switching Energy：2.3mJ (on), 3.75mJ (off)
- Input Type：Standard
- Gate Charge：90 nC
- Td (on/off) @ 25°C：22ns/204ns
- Test Condition：600V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXYT)
- Grade：-
- Qualification：-
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Overview
The IXYT40N120A4HV is a discrete Insulated Gate Bipolar Transistor (IGBT) from Littelfuse, utilizing XPT Gen 4 technology. It features a 1200V collector-emitter voltage rating and is housed in a TO-268HV package. The device supports a continuous collector current of 40A at 25°C with a maximum power dissipation of 375W. Operating temperatures range from -55°C to +175°C. This component is designed for high-efficiency switching applications requiring robust performance under high-voltage conditions.
Feature Summary
- XPT Gen 4 trench technology for optimized low conduction losses
- High power density suitable for compact designs
- Wide operating temperature range up to +175°C
Applications
- Power inverters
- Motor drives
- PFC circuits
- Battery chargers
- Welding machines
Procurement Notes
Verify the specific manufacturer designation as Littelfuse, following their acquisition of IXYS. Confirm the exact suffix and packaging type against the latest official datasheet to ensure compatibility with design requirements. Check for obsolescence status or lifecycle changes before finalizing procurement plans.
Selection Notes
Select this component for applications requiring 1200V blocking capability with moderate current handling. Ensure thermal management solutions support the specified 375W dissipation limit. Verify gate drive requirements align with standard IGBT control signals. Consider the TO-268HV package constraints for PCB layout and mounting.
Part Context
This part belongs to the IXYS/Littelfuse IXYxN120A4 series of XPT Gen 4 IGBTs. These devices are engineered for high-frequency switching up to 5kHz. The series includes various current ratings and packages, offering flexibility for different power levels while maintaining low saturation voltage characteristics.
Replacement Considerations
Direct substitutes within the same family include other IXYT40N120 variants if pinout and electrical parameters match exactly. Cross-referencing with newer generation IGBTs may require re-evaluation of thermal and drive circuit designs due to potential differences in switching speeds and gate charge.
