IXYX110N120C4

IXYX110N120C4

$20.02
  • Description:IGBT 1200V 310A PLUS247
  • Series:XPT™

SKU:77e8b30e7193 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 310A PLUS247
  • Series:XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):310 A
  • Current - Collector Pulsed (Icm):740 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 110A
  • Power - Max:1360 W
  • Switching Energy:3.6mJ (on), 1.9mJ (off)
  • Input Type:Standard
  • Gate Charge:330 nC
  • Td (on/off) @ 25°C:40ns/320ns
  • Test Condition:600V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr):48 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:PLUS247™-3
  • Grade:-
  • Qualification:-

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IXYX110N120C4

Overview

The IXYX110N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the 4th generation Trench IGBT series. The device features a TO-247-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 310 A at 25°C. The saturation voltage is rated at 2.4 V, with a maximum power dissipation of 1.36 kW. Operating temperatures range from -55°C to +175°C.

Feature Summary

  • Incorporates XPT thin-wafer technology for optimized performance characteristics.
  • Utilizes 4th generation Trench IGBT architecture.
  • Designed for high-current applications within a standard through-hole package.

Applications

  • High-power industrial motor drives
  • Switch-mode power supplies
  • Welding equipment

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required technical parameters, as variations may exist within the product line. Ensure supply chain sources are authorized distributors to mitigate counterfeiting risks. Cross-reference datasheet revisions to guarantee compatibility with existing design constraints and thermal management requirements.

Selection Notes

Select this component for circuits requiring high current handling capabilities up to 310 A. The 1.2 kV rating suits medium-voltage switching applications. Evaluate thermal resistance and heatsinking needs given the 1.36 kW power dissipation limit. Compare saturation voltage and switching losses against alternative devices if lower conduction drops or faster switching speeds are critical for the specific system efficiency targets.

Part Context

This part belongs to the IXYS 1200V XPT Gen 7 series, representing an evolution in trench gate IGBT technology. It shares the TO-247-3 form factor common across many high-power discrete semiconductors. The XPT designation indicates extended plasma technology, which typically enhances ruggedness and reduces tail current compared to standard planar structures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult IXYS engineering support or authorized distributor catalogs for direct replacements or pin-compatible alternatives with matching electrical ratings.

IXYX110N120C4IXYX110N120C4
$20.02
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