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The IXYX110N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the 4th generation Trench IGBT series. The device features a TO-247-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 310 A at 25°C. The saturation voltage is rated at 2.4 V, with a maximum power dissipation of 1.36 kW. Operating temperatures range from -55°C to +175°C.
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required technical parameters, as variations may exist within the product line. Ensure supply chain sources are authorized distributors to mitigate counterfeiting risks. Cross-reference datasheet revisions to guarantee compatibility with existing design constraints and thermal management requirements.
Select this component for circuits requiring high current handling capabilities up to 310 A. The 1.2 kV rating suits medium-voltage switching applications. Evaluate thermal resistance and heatsinking needs given the 1.36 kW power dissipation limit. Compare saturation voltage and switching losses against alternative devices if lower conduction drops or faster switching speeds are critical for the specific system efficiency targets.
This part belongs to the IXYS 1200V XPT Gen 7 series, representing an evolution in trench gate IGBT technology. It shares the TO-247-3 form factor common across many high-power discrete semiconductors. The XPT designation indicates extended plasma technology, which typically enhances ruggedness and reduces tail current compared to standard planar structures.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult IXYS engineering support or authorized distributor catalogs for direct replacements or pin-compatible alternatives with matching electrical ratings.